Dr Sreekanth Ginnaram, Research Scientist, email: nu1sg1ai@nus.edu.sg

Background
Sreekanth was born in Hyderabad, India. He earned his Ph.D. from Chang Gung University (CGU), Department of Electronic Engineering, Taiwan, in July 2020. After Ph.D., he worked as a Postdoctoral Research Fellow at both National Chung Hsing University (NCHU), Taiwan, and the National University of Singapore. In October 2023, he joined Temasek Laboratories as a Research Scientist.

Education
2014 - 2020: Ph.D., Electronic Engineering, Chang Gung University (CGU), Taiwan
2011 - 2013: M.Tech (First class with distinction), Materials Science and Engineering, Indian Institute of Technology Kharagpur (IITKGP), India

Research Activities and Interests
Stretchable/Wearable Electronics, Triboelectric/Piezoelectric Nanogenerators, Self-Powered Sensors, Human-Machine Interfaces, COMSOL Multiphysics Modelling, Resistive Switching Memories, Transistors/Memtransistor, Micro-Nanofabrication, 2D Materials, Thin Film Deposition, Electromagnetic Interference Shielding/Absorption, Electrospinning, 3D printing.

Selected publications
Google Scholar: ‪https://scholar.google.com/citations?user=iylJIsoAAAAJ&hl=en&oi=ao‬‬

• S. Ginnaram, Y.-T. Chen and Y.-C. Lai*, Solid-State Intrinsically Superstretchable Multifunctional Fiber for Biomechanical and Ambient Electromagnetic Energy Harvesting and Self-Powered Sensing, Nano Energy, vol. 95, p. 107035, 2022.
• Y.-C. Lai*, S. Ginnaram, S.-P. Lin, F.-C. Hsu, T.-C. Lu, M.-H. Lu, Breathable and Stretchable Multifunctional Liquid-Metal Electronic Skin for Harvesting Ambient Electromagnetic and Biomechanical Energy and as Epidermal Self-Powered Sensors, Adv. Funct. Mater., p. 2312443, 2023.
• S. Ginnaram, J.-T. Qiu, and S. Maikap*, “Role of the Hf/Si Interfacial Layer on the High Performance of MoS2 Based Conductive Bridge RAM for Artificial Synapse Application,” IEEE Electron Device Lett., vol. 41, no. 5, pp. 709-712, 2020.
• S. Ginnaram and S. Maikap*, “Memristive and artificial synapse performance by using TiOx /Al2O3 interface engineering in MoS2 -based metallic filament memory” J. Phys. Chem. Solids, vol. 151, p. 109901, 2021.
• S. Ginnaram, J.-T. Qiu, and S. Maikap*, “Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a‑COx‑Based Conductive Bridge Random Access Memory,” ACS Omega, vol. 5(12), pp. 7032-7043, 2020.
• A. Khan, S. Ginnaram, C.-H. Wu, H.-W. Lu, Y.-F. Pu, J. I. Wu, D. Gupta, Y.-C. Lai*, and H.-C. Lin*, Fully Self-Healable, Highly Stretchable, and Anti-Freezing Supramolecular Gels for Energy-Harvesting Triboelectric Nanogenerator and Self-Powered Wearable Electronics, Nano Energy, vol. 90, no. 106525, 2021.
• S. Chakrabarti, S. Ginnaram, S. Jana, Z.-Y. Wu, K. Singh, A. Roy, P. Kumar, S. Maikap* J.-T. Qiu, H.-M. Cheng, L.-N. Tsai, Y.-L. Chang, R. Mahapatra and J.-R. Yang, “Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism,” Sci. Rep., vol. 7, no. 4735, p. 13, 2017.
• C.-F. Chiu, S. Ginnaram, A. Senapati, Y.-P. Chen, S. Maikap*, “Switching characteristics and mechanism using Al2O3 interfacial layer in Al/Cu/GdOx/Al2O3/TiN memristor,” Electronics, vol. 9, p. 1466(1-17), 2020.
• S. Roy, S. Maikap*, G. Sreekanth, M. Dutta, D. Jana, Y. Y. Chen J.-R. Yang, “Improved resistive switching phenomena using Cu-Al alloy in Cu/AlOx/TaOx/TiN structure,” J. Alloys¬ Compd., vol. 637, pp. 517-523, 2015.
• P. Kumar, S. Maikap*, S. Ginnaram, J.-T. Qiu, D. Jana, S. Chakrabarti S. Samanta, K. Singh, A. Roy, S. Jana, M. Dutta, Y.-L. Chang, H.-M. Cheng, R. Mahapatra, H.-C. Chiu, J.-R. Yang, “Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications,” J. Electrochem. Soc., vol. 164(4), pp. B127-B135, 2017.